American Semiconductor, Inc. 200mm CMOS Foundry

Technology

Manufacturing Capability

200mm Wafer Processing

FEOL

180nm+

130nm

90nm

65nm

45nm

BEOL

Standard Metal: Copper, Aluminum

Non-Standard Metal: Gold

Prototype Friendly

Small Lot Requirements

Splits Allowed

Flexfet™: Advanced CMOS Technology

Independent Double Gated SOI CMOS Transistor

Metal Top-Gated Fully-Depleted SOI MOSFET

Self-Aligned JFET Bottom Gate

Dynamic Threshold Control

Gate-last process enables use of temperature sensitive gate dielectrics and metal gates

Scalable to 65nm and below

Custom Fabrication: Advanced Manufacturing

Copy Exact / Copy Smart

200mm Wafer Fabrication

R&D to Production

Small Lot Requirements

Develop Process Steps, Modules, or Flows

Novel Material or Structure Demonstration/Integration

SOI and Bulk CMOS

Capable of 90nm, 65nm, and 45nm Processing

FleX™: Silicon on Polymer

SOI Thinning down to <2000 Angstrom Silicon Thickness

Bulk Thinning down to ~12 Micron Silicon Thickness

Fully Functional, Flexible Circuits

Post Thinning Fab Processing Available