New SOI processes are currently in development and forecast for
introduction in 2006 to further establish American Semiconductor as the only pure-play
on-shore SOI foundry. AS180FF (ASI's 180nm high performance, ultra low power Advanced SOI CMOS Process)
development is complete and we are currently taking proto type orders for
fabrication.
AS180FF - a 0.18um SOI Advanced CMOS Process - is the recently announced
FLEXFET(TM), state-of-the-art, ultra-low-power, rad-hard process being
developed under contract to the Missile Defense Agency. This
independently double-gated revolutionary technology features 4-terminal
DTMOS capability and compact layout
AS180FF is a proprietary,
patent-pending, state-of-the-art, ultra-low-power, high frequency
commercial SOI CMOS wafer fabrication process. The process provides cost
and performance advantages to fabless companies in RF, analog, wireless,
low-power and military/aerospace markets. These advantages may also be of
interest to IDM's that pursue CMOS foundry out-sourcing of designs, or
licensing technology to better address these markets. Flexfet(TM) derives
its name from the unique design flexibility that it provides to designers
for creation of new applications and products. Increased circuit design
flexibility is provided from multiple transistor mode configurations and
threshold voltage options without additional mask design, wafer cost, or
density penalties. The unique Flexfet(TM) transistor allows mix and match
of various modes of operation and dynamic adjustment of the threshold
voltage, drive current, and off-state leakage. This provides a palate of
choices to enable designers to apply this technology in creative, novel
and advantageous ways to support creation of new components, devices and
products far beyond the scope of today's technology. The process enables
independent double metal gated performance and sub-lithographic
manufacturing capabilities. Flexfet(TM)is RF capable, inherently
resistant to radiation ("rad-hard") and allows ultra-low power
operations well below 1 volt. Flexfet(TM) is a low mask count process
that is extremely scalable and can provide improvements in fab capability
of ~2X. This combination leads to substantial performance advantages and
significantly lower costs than competing technologies. The technology is
scheduled for transfer to a production sub-contract facility mid-2005 and
may be considered for licensing.
Custom Flexfet(TM)
Processing:
Because Flexfet(TM) is a "gate last" process,
it supports a variety of new technology such as novel dielectrics, metal
gate materials, 3D integration and MEMS integration that is beyond the
scope of standard CMOS capability. American Semiconductor seeks to
collaborate with organizations doing work in these areas that might
benefit from integration of Flexfet(tm) as a CMOS base process. This page
will be updated with the process data sheets in Q2 2005. Until then,
please contact foundryinquiry@americansemi.com if you would like to
participate in the process and prototype development.
|
