American Semiconductor, Inc. 200mm CMOS Foundry

Flexfet

A Better Kind of CMOS

Flexfet TEM Image

Flexfet is an advanced CMOS process characterized by an Independently Double Gated transistor. The novel design of the Flexfet transistor brings many benefits not realized in standard CMOS processes. Flexfet enables Dynamic Threshold Control (DTC), enabling Vt to be controlled on-the-fly. Additionally, Flexfet enables Ultra Low Power operation, running at as little as 0.5V, fully depleted. Flexfet is a gate-last process, which enables integration of novel materials with low thermal budgets. The unique IDG design and SOI processing of Flexfet create an inherent radiation tolerance, which is extremely useful in avionics and space systems. Flexfet is commercially available as a foundry process from American Semiconductor with standard Process Development Kits available for 180nm and 130nm nodes, and the Radiation Effects Process Development Kit (RE-PDK) developed with support from Air Force Research Labs SHARE program.

Flexfet Advantages

  • Ultra Low Power

  • Dynamic Threshold Control

  • Inherent Radiation Tolerance

  • Maximizes Speed and Power

  • Ideal for RF, Analog, Wireless, Low Power, Military, and Aerospace Applications

  • Multi-Project Wafers available for 180nm Flexfet
    MPW Program Details


Flexfet Features

  • Independent Double-Gated (IDG) CMOS Transistor

  • Metal Top-Gated Fully Depleted MOSFET

  • Self Aligned JFET Bottom Gate

  • SOI (Silicon-On-Insulator) Wafer Fabrication

  • Flexfet Options: Detector, MIMCAP, Thick Ox


Flexfet Diagram

Flexfet Image
Flexfet Status
Flexfet is Advanced CMOS Technology that enables cutting edge designs

Logic

Imagers / Detectors

Memory

Analog / Mixed Signal